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Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN230N20T RDS(on) trr VDSS ID25 = = 200V 230A 7.5m 200ns miniBLOC, SOT-227 E153432 S G Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 175C TC = 25C Maximum Ratings 200 200 20 30 220 200 630 100 3 20 1090 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W C C C C C V~ V~ Nm/lb.in. Nm/lb.in. g S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 60A, Note 1 TJ = 150C Characteristic Values Min. Typ. Max. 200 2.5 5.0 200 V V nA 50 A 3 mA 7.5 m Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100134(03/09) (c) 2009 IXYS CORPORATION, All Rights Reserved IXFN230N20T Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS 0.05 VGS = 10V, VDS = 0.5 * VDSS, ID = 115A Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 100A RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 10V, ID = 60A, Note 1 Characteristic Values Min. Typ. Max. 100 160 28 2540 310 41 35 104 29 378 125 86 S nF pF pF ns ns ns ns nC nC nC 0.138 C/W C/W (M4 screws (4x) supplied) SOT-227B (IXFN) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS ISM VSD trr QRM IRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = 60A, VGS = 0V, Note 1 IF = 115A, VGS = 0V -di/dt = 100A/s VR = 75V 0.74 10.6 Characteristic Values Min. Typ. Max. 230 920 1.3 A A V 200 ns C A Note 1: Pulse Test, t 300s; Duty Cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN230N20T Fig. 1. Output Characteristics @ 25C 240 220 200 180 VGS = 15V 10V 7V 350 300 250 7V VGS = 15V 10V Fig. 2. Extended Output Characteristics @ 25C ID - Amperes 160 140 120 100 80 60 40 20 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5V 0 0 1 100 50 ID - Amperes 6V 200 150 6V 5V 2 3 4 5 6 7 8 9 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ 150C 240 220 200 180 160 VGS = 15V 10V 8V 7V 3.0 2.8 2.6 2.4 Fig. 4. RDS(on) Normalized to ID = 115A Value vs. Junction Temperature VGS = 10V RDS(on) - Normalized 6V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 I D = 230A I D = 115A ID - Amperes 140 120 100 80 60 40 20 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 5V -50 -25 0 25 50 75 100 125 150 175 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 115A Value vs. Drain Current 3.4 3.2 3.0 2.8 TJ = 175C VGS = 10V 220 200 Fig. 6. Drain Current vs. Case Temperature External Lead Current Limit 180 160 RDS(on) - Normalized 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 50 100 150 200 250 300 350 TJ = 25C ID - Amperes 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TC - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved IXFN230N20T Fig. 7. Input Admittance 200 180 240 160 140 200 280 TJ = - 40C Fig. 8. Transconductance g f s - Siemens ID - Amperes 120 100 80 25C 60 40 20 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 - 40C TJ = 150C 25C 160 120 80 40 0 0 20 40 60 80 100 120 140 160 180 200 150C VGS - Volts ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 350 300 8 250 7 10 9 VDS = 100V I D = 115A I G = 10mA Fig. 10. Gate Charge IS - Amperes VGS - Volts TJ = 150C TJ = 25C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 200 150 100 50 0 6 5 4 3 2 1 0 0 40 80 120 160 200 240 280 320 360 400 VSD - Volts QG - NanoCoulombs Fig. 11. Capacitance 100,000 1,000 Fig. 12. Forward-Bias Safe Operating Area f = 1 MHz Capacitance - PicoFarads RDS(on) Limit Ciss 10,000 25s ID - Amperes 100 Coss 1,000 100s TJ = 175C Crss 100 0 5 10 15 20 25 30 35 40 10 1 TC = 25C Single Pulse 10 1ms 100 1000 VDS - Volts VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_230N20T (9E)03-25-09 IXFN230N20T Fig. 13. Maximum Transient Thermal Impedance 1.000 Z (th)JC - C / W 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: F_230N20T (9E)03-25-09 |
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